inchange semiconductor isc product specification isc silicon npn power transistor 2SD1117 description c ollector-emitter breakdown voltage- : v (br)ceo = 40v(min) low collector-emitter saturation voltage- : v ce(sat) = 1.2v(max) @i c = 5a wide area of safe operation complement to type 2sb850 applications designed for audio amplifier, series regulators and general purpose power amplifiers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i b b base current-continuous 2 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1117 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 40 v v (br)cbo collector-base breakdown voltage i c = 0.1ma; i e = 0 40 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 1.2 v v b e (sat) base-emitter saturation voltage i c = 5a; i b = 0.5a b 2.0 v i cbo collector cutoff current v cb = 40v; i e = 0 10 a i ebo emitter cutoff current v eb = 7v; i c = 0 10 a h fe dc current gain i c = 2a; v ce = 5v 60 240 isc website www.iscsemi.cn 2
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